Dr. Jason Ryan, a National Research Council Postdoctoral Research Associate at the Semiconductor and Dimensional Metrology Division of the National Institute of Standards and Technology in Gaithersburg, MD, presented his work on electron spin resonance in oxide-semiconductor interface defect states at the Materials Science and Engineering Department Seminar series. As a guest of the NMDG, Dr. Ryan met with faculty and students of the NMDG to discuss bias temperature stability and device reliability research on MOS devices.