Journal Publications
Kabir, M. F., & Campbell, K. A. (2024). Effects of group IVA elements on the opto-electrical response of Ge2Se3-based optically gated transistors. Micromachines, 15, 1000. https://doi.org/https://doi.org/10.3390/mi15081000
Stoller, S., & Campbell, K. A. (2021). Demonstration of Three True Random Number Generator Circuits Using Memristor Created Entropy and Commercial Off-the-Shelf Components. Entropy, 23, 371. https://doi.org/https://doi.org/10.3390/e23030371
https://www.mdpi.com/1099-4300/23/3/371
Drake, K., Lu, T., Majumdar, K. H., & Campbell, K. A. (2019). Comparison of the Electrical Response of Cu and Ag Ion-Conducting SDC Memristors Over the Temperature Range 6 K to 300 K. Micromachines, 10, 663. https://doi.org/10.3390/mi10100663
Campbell, K. A., Bassine, R. A., Kabir, F. M., & Astle, J. A. (2019). An optically gated transistor composed of amorphous M + Ge2Se3 (M = Cu or Sn) for accessing and continuously programming a memristor. ACS Appl. Electron. Mater., 1, 96–104. https://doi.org/10.1021/acsaelm.8b00034
Campbell, K. A. (2017). Self-directed channel memristor for high temperature operation. Microelectron. J., 59, 10–14. https://doi.org/10.1016/j.mejo.2016.11.006
Campbell, K. A., Drake, K. T., & Barney, S. (2016). Pulse Shape and Timing Dependence on the Spike-Timing Dependent Plasticity Response of Ion-Conducting Memristors as Synapses. Front Bioeng Biotechnol, 4, 97. https://doi.org/10.3389/fbioe.2016.00097
Huang, Y., Tang, J., Cheng, Y., Li, H., Campbell, K. A., & Han, Z. (2016). Real-Time Detection of False Data Injection in Smart Grid Networks: An Adaptive CUSUM Method and Analysis. IEEE Systems Journal, 10, 532–543.
Edwards, A. H., Barnaby, H. J., Campbell, K. A., Kozicki, M. N., Liu, W., & Marinella, M. J. (2015). RECONFIGURABLE SYSTEMS: ADVANCED APPLICATIONS AND TECHNOLOGIES. Proceedings of the IEEE, 103.
Huang, Y., Esmalifalak, M., Cheng, Y., Li, H., Campbell, K. A., & Han, Z. (2014). Adaptive Quickest Estimation Algorithm for Smart Grid Network Topology Error. IEEE Systems Journal, 8, 430–440.
Rodriguez, R., Lundell, S., Davis, Q., Lau, L., Poulter, B., & Campbell, K. (2014). PECVD-deposited germanium chalcogenide films for use in memory devices. Journal of the Idaho Academy of Science, 50, 78–79.
Rothenbuhler, A., Tran, T., Smith, E., Saxena, V., & Campbell, K. A. (2013). Reconfigurable threshold logic gates using memristive devices. Journal of Low Power Electronics and Applications, 3, 174–193.
Devasia, A., MacMahon, D., Raoux, S., Campbell, K. A., & Kurinec, S. K. (2012). Investigation of inter-diffusion in bilayer GeTe/SnSe phase change memory films. Thin Solid Films, 520, 3931–3935.
Edwards, A. H., Campbell, K. A., & Pineda, A. C. (2012). Self-trapping of single and paired electrons in Ge2Se3. J Phys Condens Matter, 24, 195801.
Edwards, A. H., Campell, K. A., & Pineda, A. C. (2012). Electron self-trapping in Ge2Se3 and its role in Ag and Sn incorporation. MRS Online Proceedings Library Archive, 1431.
Rodriguez, R., Campbell, K., Regner, J., Lau, L., & Strommen, D. (2012). PECVD deposited germanium selenide films in phase memory devices. Abstracts, 67th Northwest Regional Meeting of the American Chemical Society, Boise, ID, United States, June 24-27, NORM–131.
Edwards, A. H., Taylor, P. C., Campbell, K. A., & Pineda, A. C. (2011). First-principles study of (75)As NQR in arsenic-chalcogenide compounds. J Phys Condens Matter, 23, 055502.
Devasia, A., Kurinec, S., Campbell, K. A., & Raoux, S. (2010). Influence of Sn Migration on phase transition in GeTe and Ge2Se3 thin films. Appl. Phys. Lett., 96, 141908/1–141908/3.
Devasia, A., Bai, F., Davis, M., Campbell, K. A., Gupta, S., & Kurinec, S. (2009). Analyzing residual stress in bilayer chalcogenide Ge2Se3/SnTe films. Thin Solid Films, 517, 6516–6519.
Jarvis, K., Carpenter, R. W., Davis, M., & Campbell, K. A. (2009). An investigation of amorphous Ge2Se3 structure for phase change memory devices using fluctuation electron microscopy. Journal of Applied Physics, 106, 083507.
Campbell, K. A., & Anderson, C. M. (2007). Phase-change memory devices with stacked Ge-chalcogenide/Sn-chalcogenide layers. Microelectronics Journal, 38, 52–59.
Bai, F., Gupta, S., Devasia, A., Kurinec, S., Davis, M., & Campbell, K. A. (2007). Investigation of Phase Transition in Stacked Ge-Chalcogenide/SnTe Phase-change Memory Films. MRS Online Proceedings Library Archive, 1056.
Campbell, K., Davis, M. G., & Peloquin, J. M. (2007). Characterization of Sn, Zn, In, and Sb-containing GeSe alloys for phase-change electronic memory applications. MRS Online Proceedings Library Archive, 997.
Campbell, K. A., Davis, M. G., & Peloquin, J. M. (2007). Chalcogenide bilayer materials used to create multi-state resistance variable devices. Abstracts, 62nd Northwest Regional Meeting of the American Chemical Society, Boise, ID, United States, June 17-20, NW–234.
Peloquin, J. M., & Campbell, K. A. (2007). The structure of the manganese complex of Photosystem II: The Dangler Model revisited. Abstracts, 62nd Northwest Regional Meeting of the American Chemical Society, Boise, ID, United States, June 17-20, NW–218.
Davis, M. G., & Campbell, K. A. (2007). Synthesis and characterization of metal-doped chalcogenide glasses. Abstracts, 62nd Northwest Regional Meeting of the American Chemical Society, Boise, ID, United States, June 17-20, NW–039.
Britt, R. D., Campbell, K. A., Peloquin, J. M., Gilchrist, M. L., Aznar, C. P., Dicus, M. M., … Messinger, J. (2004). Recent pulsed EPR studies of the photosystem II oxygen-evolving complex: implications as to water oxidation mechanisms. Biochim Biophys Acta, 1655, 158–71.
Hsieh, W.-Y., Campbell, K. A., Gregor, W., David, B. R., Yoder, D. W., Penner-Hahn, J. E., & Pecoraro, V. L. (2004). The first spectroscopic model for the S1 state multiline signal of the OEC. Biochim Biophys Acta, 1655, 149–57.
Debus, R. J., Aznar, C., Campbell, K. A., Gregor, W., Diner, B. A., & Britt, R. D. (2003). Does aspartate 170 of the D1 polypeptide ligate the manganese cluster in photosystem II? An EPR and ESEEM Study. Biochemistry, 42, 10600–8.
Campbell, K. A., Lashley, M. R., Wyatt, J. K., Nantz, M. H., & Britt, R. D. (2001). Dual-Mode EPR Study of Mn(III) Salen and the Mn(III) Salen-Catalyzed Epoxidation of cis-β-Methylstyrene. J. Am. Chem. Soc., 123, 5710–5719.
Debus, R. J., Campbell, K. A., Gregor, W., Li, Z.-L., Burnap, R. L., & Britt, R. D. (2001). Does histidine 332 of the D1 polypeptide ligate the manganese cluster in photosystem II? An electron spin echo envelope modulation study. Biochemistry, 40, 3690–3699.
Peloquin, J. M., Campbell, K. A., Randall, D. W., Evanchik, M. A., Pecoraro, V. L., Armstrong, W. H., & Britt, R. D. (2000). 55Mn ENDOR of the S2-State Multiline EPR Signal of Photosystem II: Implications on the Structure of the Tetranuclear Mn Cluster. J. Am. Chem. Soc., 122, 10926–10942.
Debus, R. J., Campbell, K. A., Pham, D. P., Hays, A.-M. A., & Britt, R. D. (2000). Glutamate 189 of the D1 Polypeptide Modulates the Magnetic and Redox Properties of the Manganese Cluster and Tyrosine YZ in Photosystem II. Biochemistry, 39, 6275–6287.
Campbell, K. A., Force, D. A., Nixon, P. J., Dole, F., Diner, B. A., & Britt, R. D. (2000). Dual-Mode EPR Detects the Initial Intermediate in Photoassembly of the Photosystem II Mn Cluster: The Influence of Amino Acid Residue 170 of the D1 Polypeptide on Mn Coordination. J. Am. Chem. Soc., 122, 3754–3761.
Debus, R. J., Campbell, K. A., Peloquin, J. M., Pham, D. P., & Britt, R. D. (2000). Histidine 332 of the D1 Polypeptide Modulates the Magnetic and Redox Properties of the Manganese Cluster and Tyrosine YZ in Photosystem II. Biochemistry, 39, 470–478.
Campbell, K. A., Yikilmaz, E., Grant, C. V., Gregor, W., Miller, A.-F., & Britt, R. D. (1999). Parallel Polarization EPR Characterization of the Mn(III) Center of Oxidized Manganese Superoxide Dismutase. J. Am. Chem. Soc., 121, 4714–4715.
Yikilmaz, E., Campbell, K. a., Lind, A., Sorkin, D., Vance, C., Britt, R. D., & Miller, A. F. (1999). Protons related to activity and E degrees tuning in Fe-and Mn-superoxide dismutases. JOURNAL OF INORGANIC BIOCHEMISTRY, 74.
Britt, R. D., Peloquin, J. M., Campbell, K. A., Clemens, K., & Evanchik, M. (1999). EPR characterization of the Photosystem II oxygen evolving complex. JOURNAL OF INORGANIC BIOCHEMISTRY, 74.
Debus, R. J., Campbell, K. A., Pham, D. P., Hays, A.-M. A., Peloquin, J. M., & Britt, R. D. (1998). Influence of D1-Glu189 on the properties of YZ and the manganese cluster in photosystem 2. Photosynth.: Mech. Eff., Proc. Int. Congr. Photosynth., 11th, 2, 1375–1378.
Peloquin, J. M., Campbell, K. A., & Britt, R. D. (1998). 55Mn Pulsed ENDOR Demonstrates That the Photosystem II “Split” EPR Signal Arises from a Magnetically-Coupled Mangano-Tyrosyl Complex. J. Am. Chem. Soc., 120, 6840–6841.
Campbell, K. A., Gregor, W., Pham, D. P., Peloquin, J. M., Debus, R. J., & Britt, R. D. (1998). The 23 and 17 kDa Extrinsic Proteins of Photosystem II Modulate the Magnetic Properties of the S1-State Manganese Cluster. Biochemistry, 37, 5039–5045.
Campbell, K. A., Peloquin, J. M., Pham, D. P., Debus, R. J., & Britt, R. D. (1998). Parallel Polarization EPR Detection of an S1-State “Multiline” EPR Signal in Photosystem II Particles from Synechocystis sp. PCC 6803. J. Am. Chem. Soc., 120, 447–448.
Campbell, K. A., Peloquin, J. M., Diner, B. A., Tang, X.-S., Chisholm, D. A., & Britt, R. D. (1997). The τ-nitrogen of D2 histidine 189 is the hydrogen bond donor to the tyrosine radical YD.bul. of photosystem II. J. Am. Chem. Soc., 119, 4787–4788.
Book Chapters
Campbell, K. A. (2019). Self-Directed Channel Memristor: Operational Dependence on the Metal-Chalcogenide Layer. In Handbook of Memristor Networks (p. 38 pages long). New York: Springer.
Pino, R. E., Oblea, A. S., & Campbell, K. A. (2014). Memristor SPICE Model Simulation and Device Hardware Correlation. In Cybersecurity Systems for Human Cognition Augmentation. Advances in Information Security (pp. 169–174). Springer, Cham.
Parke, S., Campbell, K. A., & Mouli, C. (2013). Memory technologies. In Guide State-of-the-Art Electron Devices (pp. 171–187). John Wiley & Sons Ltd.
Britt, R. D., Peloquin, J. M., & Campbell, K. A. (2000). Pulsed and parallel-polarization EPR characterization of the photosystem II oxygen-evolving complex. In Annu. Rev. Biophys. Biomol. Struct. (Vol. 29, pp. 463–495).
Britt, R. D., Force, D. A., Campbell, K. A., Randall, D. W., Gilchrist, L. M., Clemens, K. L., … Debus, R. J. (1998). Progress in characterization of the Photosystem II oxygen evolving complex using advanced EPR methods. In ACS Symp. Ser. (Vol. 692, pp. 272–285).
Messinger, J., Robblee, J. H., Fernandez, C., Cinco, R. M., Visser, H., Bergmann, U., … others. (1998). Oxidation states and structure of the manganese cluster in the S0 State of the oxygen evolving complex (pp. 1279–1282). Springer, Dordrecht.
Media Contribution
(2016). Memristor-variants-and-models-from-knowm. Semiconducting Manufacturing and Design. Semiconducting Manufacturing and Design.
http://semimd.com/blog/2016/01/22/memristor-variants-and-models-from-knowm/
(2016). passive-components-get-active. Electronic Design. Electronic Design.
http://electronicdesign.com/passives/passive-components-get-active
(2016). Did the Memristor Breakthrough Finally Occur. Evaluation Engineering. Evaluation Engineering.
http://www.evaluationengineering.com/research-insights-memristor-breakthrough-finally-occur
(2015). Knowm first to deliver memristors capable of bidirectional learning. Semiconductor Devices. Semiconductor Devices.
http://electroiq.com/blog/2015/09/knowm-first-to-deliver-memristors-capable-of-bi-directional-learning/
(2015). knowm-first-to-deliver-configurable-artificial-neural-networks-using-bi-directional-learning-memristors. Semiconducting manufacturing and design. Semiconducting manufacturing and design.
http://semimd.com/blog/2015/09/02/knowm-first-to-deliver-configurable-artificial-neural-networks-using-bi-directional-learning-memristors/
(2015). neuromemristive-processor-breaks-boundaries-machine-learning. PDDnet. PDDnet.
https://www.pddnet.com/news/2015/09/neuromemristive-processor-breaks-boundaries-machine-learning
(2015). this-startup-has-a-brain-inspired-chip-for-machine-learning. Forbes. Forbes.
http://www.forbes.com/sites/alexknapp/2015/09/09/this-startup-has-a-brain-inspired-chip-for-machine-learning/#26a7d06551a2
(2015). knowm-snaps-in-final-piece-of-memristor-puzzle. HPC Wire. HPC Wire.
https://www.hpcwire.com/2015/09/09/knowm-snaps-in-final-piece-of-memristor-puzzle/
(2015). memristor-brain-like-chips. Fortune. Fortune.
http://fortune.com/2015/09/03/memristor-brain-like-chips/
(2015). Knowm-Deliver-Commercial-Memristors-Capable-Bi-Directional-Learning. Business Wire. Business Wire.
http://www.businesswire.com/news/home/20150902005497/en/Knowm-Deliver-Commercial-Memristors-Capable-Bi-Directional-Learning
(2015). knowms-memristors-alive-shipping. EE Times. EE Times.
http://www.analog-eetimes.com/news/knowms-memristors-alive-shipping
(2015). knowm-first-to-deliver-configurable-artificial-neural-networks-using-bi-directional-learning-memristors. Chip Design. Chip Design.
http://eecatalog.com/chipdesign/2015/09/17/knowm-first-to-deliver-configurable-artificial-neural-networks-using-bi-directional-learning-memristors/
Selected Patents
Campbell, K. A. (2021). Optically Gated Transistor Light Detector. United States.
Campbell, K. A. (2022). Optically gated transistor selector for variable resistive memory device . United States.
Campbell, K. A. (2017). Tunable Variable Resistance Memory Device US 9,583,703. United States.
Campbell, K. A. (2018). 62/511,119 Optically Activated Transistor, Switch, and Photodiode. United States.
Campbell, K. A. (2018). Application of Optically-Gated Transistor as a Memristor Selector Switch. United States.
Campbell, K. A. (2019). 62701335 – Application of Optically-Gated Transistor as a Memristor Selector Switch. United States.
Campbell, K. A. (2016). Tunable variable resistance memory device. PCT Int. Appl.
Campbell, K. A. (2016). Tunable variable resistance memory devices comprising metal in chalcogenide glass layer for enhanced resistance tuning. U.S. Pat. Appl. Publ.
Campbell, K. A. (2016). Diode/superionic conductor/polymer memory structure. United States.
Campbell, K. A. (2015). Carbon-chalcogenide variable resistance memory device. patent.
Daley, J., & Campbell, K. A. (2015). Phase change current density control structure. United States.
Farnworth, W. M., & Campbell, K. A. (2014). Microelectronic devices and methods for manufacturing microelectronic devices. United States.
Liu, J., & Campbell, K. A. (2014). Resistance variable memory device with nanoparticle electrode and method of fabrication. Patent.
Campbell, K. A. (2014). Method of forming a memory device incorporating a resistance variable chalcogenide element. Patent.
Farnworth, W. M., & Campbell, K. A. (2013). Microelectronic devices and methods for manufacturing microelectronic devices. United States.
Campbell, K. A. (2013). Continuously variable resistor. United States.
Campbell, K. A. (2013). Forced ion migration for chalcogenide phase change memory device. United States.
Campbell, K. A. (2013). Memory device incorporating a resistance variable chalcogenide element. United States.
Campbell, K. A. (2012). Variable integrated analog resistor. United States.
Campbell, K. A. (2012). Integratable programmable capacitive device. United States.
Daley, J., & Campbell, K. A. (2011). Phase change current density control structure. U.S.
Campbell, K. A. (2011). Wide band sensor. U.S. Pat. Appl. Publ.
Campbell, K. A. (2011). Continuously variable resistor comprising chalcogenide layer connected with metal dispersed chalcogenide layer. U.S. Pat. Appl. Publ.
Campbell, K. A. (2011). Resistance variable memory with temperature tolerant materials. United States.
Campbell, K. A. (2011). Assemblies displaying differential negative resistance, semiconductor constructions, and methods of forming assemblies displaying differential negative resistance. United States.
Campbell, K. A. (2011). Resistance variable memory device and method of fabrication. United States.
Campbell, K. A., Gilton, T. L., Moore, J. T., & Li, J. (2011). Resistance variable memory devices with passivating material. United States.
Campbell, K. A. (2011). Forced ion migration for chalcogenide phase change memory device. United States.
Campbell, K. A. (2010). Variable integrated analog resistor as programmable variable resistor component. U.S. Pat. Appl. Publ.
Campbell, K. A. (2010). Method of forming a memory device incorporating a resistance-variable chalcogenide element. United States.
Campbell, K. A. (2010). Amorphous carbon-based non-volatile memory. United States.
Campbell, K. A. (2010). PCRAM device with switching glass layer. United States.
Campbell, K. A. (2010). Differential negative resistance memory. United States.
Campbell, K. A. (2010). Phase change memory cell and method of formation. United States.
Campbell, K. A., Li, J., McTeer, A., & Moore, J. T. (2010). Layered resistance variable memory device and method of fabrication. United States.
Campbell, K. A. (2010). Method of forming a variable resistance memory device comprising tin selenide. United States.
Campbell, K. A. (2010). Resistance variable memory with temperature tolerant materials. United States.
Daley, J., Campbell, K. A., & Brooks, J. F. (2009). Access transistor for memory device. United States.
Campbell, K. A. (2009). Resistance variable memory with temperature tolerant materials. United States.
Campbell, K. A., & Gilton, T. L. (2009). Simultaneous read circuit for multiple memory cells. United States.
Campbell, K. A. (2008). Forced ion migration for chalcogenide phase change memory device. U.S. Pat. Appl. Publ.
Campbell, K. A. (2008). Phase change memory cell and method of formation. United States.
Campbell, K. A., Daley, J., & Brooks, J. F. (2008). Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication. United States.
Campbell, K. A., Gilton, T. L., Moore, J. T., & Brooks, J. F. (2008). Methods of operating and forming chalcogenide glass constant current devices. United States.
Campbell, K. A., & Moore, J. T. (2008). Method of forming non-volatile resistance variable devices and method of forming a programmable memory cell of memory circuitry. United States.
Campbell, K. A., Gilton, T. L., Moore, J. T., & Li, J. (2008). Method of forming resistance variable devices. United States.
Moore, J. T., Campbell, K. A., & Gilton, T. L. (2008). Method of manufacture of a PCRAM memory cell. United States.
Campbell, K. A. (2008). Methods of forming assemblies displaying differential negative resistance. United States.
Farnworth, W. M., & Campbell, K. A. (2007). Microelectronic devices and methods for manufacturing microelectronic devices. U.S. Pat. Appl. Publ.
Daley, J., & Campbell, K. A. (2007). Phase change current density control structure. PCT Int. Appl.
Campbell, K. A. (2007). Chalcogenide-based electrokinetic memory element not using silver chalcogenides and method of fabrication. U.S. Pat. Appl. Publ.
Campbell, K. A., Daley, J., & Brooks, J. F. (2007). Resistance variable memory element with threshold device and method of forming the same. U.S. Pat. Appl. Publ.
Liu, J., & Campbell, K. A. (2007). Resistance variable memory device with nanoparticle electrode and method of fabrication. U.S. Pat. Appl. Publ.
Daley, J., Campbell, K. A., & Brooks, J. F. (2007). Access transistor for memory device and its fabrication. U.S. Pat. Appl. Publ.
Campbell, K. A. (2007). Phase change memory cell and method of formation. PCT Int. Appl.
Campbell, K. A. (2007). Method and apparatus for providing color changing thin film material. U.S. Pat. Appl. Publ.
Campbell, K. A., Daley, J., & Brooks, J. F. (2007). Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication. U.S. Pat. Appl. Publ.
Moore, J. T., Campbell, K. A., & Gilton, T. L. (2007). Memory element and its method of formation. United States.
Campbell, K. A., Daley, J., & Brooks, J. F. (2007). Resistance variable memory element with threshold device and method of forming the same. United States.
Moore, J. T., Campbell, K. A., & Gilton, T. L. (2007). Method of forming a resistance variable memory element. United States.
Campbell, K. A. (2007). Amorphous carbon-based non-volatile memory. United States.
Campbell, K. A. (2006). SnSe-type-based limited reprogrammable cell. U.S. Pat. Appl. Publ.
Campbell, K. A., & Klein, R. J. (2006). Wet chemical method to form silver-rich silver-selenide. U.S. Pat. Appl. Publ.
Campbell, K. A., Gilton, T. L., & Moore, J. T. (2006). Method of forming a memory cell. U.S. Pat. Appl. Publ.
Moore, J., Campbell, K. A., & Brooks, J. F. (2006). Structure for amorphous carbon based non-volatile memory. U.S. Pat. Appl. Publ.
Campbell, K. A. (2006). Resistance variable memory with temperature tolerant materials. U.S. Pat. Appl. Publ.
Campbell, K. A. (2006). Amorphous carbon-based nonvolatile memory device and fabrication thereof. U.S. Pat. Appl. Publ.
Campbell, K. A. (2006). PCRAM device with switching glass layer. U.S. Pat. Appl. Publ.
Campbell, K. A., Li, J., McTeer, A., & Moore, J. T. (2006). Layered resistance variable memory device and method of fabrication. United States.
Campbell, K. A., & Moore, J. T. (2006). Non-volatile resistance variable devices. United States.
Campbell, K. A., Moore, J. T., & Gilton, T. L. (2006). Fabrication of single polarity programmable resistance structure. United States.
Moore, J. T., Campbell, K. A., & Gilton, T. L. (2006). Method of manufacture of a resistance variable memory cell. United States.
Campbell, K. A., & Moore, J. T. (2006). Method of forming a programmable memory cell and chalcogenide structure. United States.
Campbell, K. A. (2006). Resistance variable memory elements based on polarized silver-selenide network growth. United States.
Campbell, K. A. (2006). Resistance variable memory elements and methods of formation. United States.
Campbell, K. A. (2006). Method and apparatus for resistance variable material cells. United States.
Liu, J., Gilton, T., Moore, J., & Campbell, K. (2006). Resistance variable devices with controllable channels. United States.
Campbell, K. A. (2005). Method to manufacture polymer memory with copper ion switching species. U.S. Pat. Appl. Publ.
Campbell, K. A., Gilton, T. L., & Moore, J. T. (2005). Nonvolatile zero field splitting resonance memory. U.S. Pat. Appl. Publ.
Campbell, K. A., Gilton, T. L., Moore, J. T., & Brooks, J. F. (2005). Method of resetting chalcogenide glass two-terminal constant current nonvolatile memory device. U.S. Pat. Appl. Publ.
Campbell, K. A. (2005). Performance PCRAM cell. U.S. Pat. Appl. Publ.
Campbell, K. (2005). Assemblies displaying differential negative resistance. United States.
Campbell, K. A. (2005). Methods and apparatus for resistance variable material cells. United States.
Moore, J. T., Gilton, T. L., & Campbell, K. A. (2005). Methods for forming chalcogenide glass-based memory elements. United States.
Campbell, K. A., Moore, J., Gilton, T. L., & Brooks, J. F. (2005). Method to alter chalcogenide glass for improved switching characteristics. United States.
Campbell, K. A., Moore, J. T., & Gilton, T. L. (2005). Single-polarity programmable resistance-variable memory element. United States.
Moore, J. T., & Campbell, K. A. (2005). Memory device and methods of controlling resistance variation and resistance profile drift. United States.
Campbell, K. A., & Moore, J. T. (2005). Method of forming chalcogenide comprising devices, method of forming a programmable memory cell of memory circuitry, and a chalcogenide comprising device. United States.
Campbell, K. A., Gilton, T. L., Moore, J. T., & Li, J. (2005). Method of forming chalcogenide comprising devices. United States.
Moore, J. T., Gilton, T. L., & Campbell, K. A. (2005). Graded GexSe100-x concentration in PCRAM. United States.
Moore, J. T., Gilton, T. L., & Campbell, K. A. (2005). Method of refreshing a PCRAM memory device. United States.
Campbell, K. A., Moore, J. T., & Gilton, T. L. (2005). Resistance variable ‘on’memory. United States.
Moore, J. T., Campbell, K. A., & Gilton, T. L. (2005). Method to control silver concentration in a resistance variable memory element. United States.
Campbell, K. A. (2004). Diode/superionic conductor/polymer memory structure. United States.
Moore, J. T., Gilton, T. L., & Campbell, K. A. (2004). Graded chalcogenide glass concentration in PCRAM. U.S. Pat. Appl. Publ.
Moore, J. T., Gilton, T. L., & Campbell, K. A. (2004). Methods to form a memory cell with metal-rich metal chalcogenide. U.S. Pat. Appl. Publ.
Moore, J. T., Campbell, K. A., & Gilton, T. L. (2004). Fabrication of a resistance variable memory element having controlled silver concentration. U.S. Pat. Appl. Publ.
Moore, J. T., Campbell, K. A., & Gilton, T. L. (2004). Method of manufacture of a PCRAM memory cell. U.S. Pat. Appl. Publ.
Campbell, K. A. (2004). Devices displaying differential negative resistance. U.S. Pat. Appl. Publ.
Gilton, T. L., & Campbell, K. A. (2004). Method of retaining memory state in a programmable conductor RAM. United States.
Campbell, K., Moore, J., Gilton, T., & Brooks, J. (2004). Resistance variable memory element having chalcogenide glass for improved switching characteristics. United States.
Giltom, T. L., Campbell, K. A., & Moore, J. T. (2004). Methods of forming non-volatile resistance variable devices and methods of forming silver selenide comprising structures. United States.
Moore, J., & Campbell, K. (2004). PCRAM cell operation method to control on/off resistance variation. United States.
Campbell, K. A., Gilton, T. L., Moore, J. T., & Brooks, J. F. (2004). Chalcogenide glass constant current device, and its method of fabrication and operation. United States.
Campbell, K. A., & Moore, J. T. (2004). Method of forming chalcogenide comprising devices and method of forming a programmable memory cell of memory circuitry. United States.
Moore, J., Campbell, K., & Gilton, T. (2004). Method and apparatus for controlling metal doping of a chalcogenide memory element. United States.
Campbell, K. A. (2003). Methods and apparatus for resistance variable material cells. PCT Int. Appl.
Campbell, K. A., Moore, J., Gilton, T. L., & Brooks, J. F. (2003). Method to alter composition of chalcogenide glass for improved switching characteristics of RAM devices. U.S. Pat. Appl. Publ.
Campbell, K. A., & Moore, J. T. (2003). Silver-selenide/chalcogenide glass stack for resistance variable memory. U.S. Pat. Appl. Publ.
Gilton, T. L., Bowes, S. W., Moore, J. T., Brooks, J. F., & Campbell, K. A. (2003). Semiconductor processing method using photoresist and an antireflective coating. U.S. Pat. Appl. Publ.
Gilton, T. L., Campbell, K. A., & Moore, J. T. (2003). Methods of forming germanium selenide comprising devices and methods of forming silver selenide comprising structures. U.S. Pat. Appl. Publ.
Campbell, K. A. (2003). Stoichiometry for chalcogenide glasses useful for memory devices and method of formation. U.S. Pat. Appl. Publ.
Campbell, K. A., & Moore, J. T. (2003). Method of forming nonvolatile resistance variable devices. PCT Int. Appl.
Campbell, K. A., Gilton, T. L., Moore, J. T., & Li, J. (2003). Method of forming chalcogenide-containing nonvolatile resistance variable devices. U.S. Pat. Appl. Publ.
Gilton, T., Campbell, K., & Moore, J. (2003). Methods of forming germanium selenide comprising devices and methods of forming silver selenide comprising structures. Patent.
Campbell, K. A. (2017). Tunable variable resistance memory device US 9,583,699. United States.
Presentations
Invited
Campbell, K. A. (2018). Ge2Se3-Doped Devices: Towards Optically-Gated Transistors and Memristors for Neuromorphic Computing. International Conference on Neuromorphic Systems. Knoxville, TN USA.
Campbell, K. A. (2018, September). Enabling Hybrid Electric-Photonic Memory with Optically-Gated Transistors. NSF ASSERT Program Pitch Event. Boise State University: NSF.
Campbell, K. A. (2016, August). Ag- and Cu-Based Ion-Conducting Memristor Design and Electrical Characterization. 5th Memristor Symposium. Dresden, Germany.
Campbell, K. A. (2016, August). Memristor Demonstration. 15th International Workshop on Cellular Nanoscale Networks and their Applications. Dresden, Germany.
Campbell, K. A. (2015, August). Continuously-variable memristor demonstration. Mid-West Symposium on Circuits and Systems. Ft. Collins, CO.
Campbell, K. A. (2011, April). Chalcogenide-based resistance variable memory and zero-field splitting memory. U.S. Patent and Trademark Office Invited Speaker Series. Alexandria, VA: U.S.P.T.O.
Campbell, K. A. (2009, November). 2009 Non-Volatile Memory Technology Symposium, Portland, OR. 10th Non-Volatile Memory Technology Symposium. Portland, OR: IEEE Electron Devices Society.
Campbell, K. A. (2009, July). Variable Resistance Devices Based on Ion-Conducting and Phase-Change Materials. AFRL Reconfigurable Workshop. Santa Fe, NM: U.S. Air Force.
Campbell, K. A. (2009, June). Chalcogenide-based materials for application in electronic memory. Micron Leading Edge Presentation Seminar Series. Micron Technology, Boise, ID: Micron.
Campbell, K. A. (2008, December). Why and How to Patent Your Research Inventions at Boise State. BSU College of Engineering Seminar. BSU: COEN.
Campbell, K. A. (2008, November). 9th Non-Volatile Memory Technology Symposium. 2008 Non-Volatile Memory Technology Symposium. Pacific Grove, CA: IEEE Electron Devices Society.
Campbell, K. A. (2008, June). New Non-Volatile Memory Materials and Technologies: From Chalcogenide Materials to Quantum Memories. Jet Propulsion Lab Seminar. Pasadena, CA: NASA JPL.
Campbell, K. A. (2008, April). Chalcogenide-Based Devices for Application in Multi-State Electronic Memory. IT Collaboratory 2008 Annual Research Symposium Microsystems: Materials, Devices, and Systems. Rochester, NY: Rochester Institute of Technology.
Campbell, K. A. (2008, March). Chalcogenide-Metal Alloys and Layered Chalcogenide Material Devices for Application in Multi-State Phase-Change Electronic Memory. Materials Research Society Spring Meeting. San Francisco, CA: MRS.
Campbell, K. A. (2007, November). 2007 Non-Volatile Memory Technology Symposium, San Mateo, CA. 8th Non-Volatile Memory Technology Symposium. San Mateo, CA: IEEE Electron Devices Society.
https://doi.org/10.1109/NVMT.2007.4389931
Campbell, K. A. (2007, February). Reconfigurable Electronics Design Using Chalcogenide materials. 1st Reconfigurable Electronics Workshop. Albuquerque, NM: U.S. Air Force.
Campbell, K. A. (2007, February). Influence of the Bottom Electrode and Metal-Chalcogenide Layer on Multi-Layer Phase-Change Electronic Memory Device Operation. College of Engineering Seminar. Arizona State University: ASU.
Campbell, K. A. (2007, April). Multi-Layer Phase-Change Electronic Memory Devices. College of Engineering Seminar. Boise State University.
Campbell, K. A. (2006, August). Chalcogenide Phase Change Memory Stack Structures. Air Force Research Lab, Kirtland AFB Space Vehicles Directorate Seminar. Air Force Research Lab, Kirtland AFB, Albuquerque, NM: AFRL.
Campbell, K. A. (2006, November). 2006 Non-Volatile Memory Technology Symposium, Albuquerque, NM. 7th Non-Volatile Memory Technology Symposium. Albuquerque, NM: IEEE Electron Devices Society.
https://doi.org/10.1109/NVMT.2007.4389931
Campbell, K. A. (2006, February). Chalcogenide Materials in Electronic Memories and Devices. University of Washington Dept of Materials Science Seminar. Seattle, WA: U of W.
Campbell, K. A. (2006, February). Chalcogenide Materials Research for Radiation Hardened Electronic Memories. Dept. of Materials Science and Engineering Seminar. Boise State University: BSU.
Campbell, K. A. (2000, March). Structural Studies of the Donor Side of Photosystem II Using Pulsed and CW Electron Paramagnetic Resonance Techniques. Seminar, Dept. of Biological Sciences, Florida State University and National High Magnetic Field Laboratory. Florida State University: Florida State University.
Campbell, K. A. (1999, June). Probing the Protein Environment of Photosystem II with Pulsed and CW-EPR Techniques. UC Davis Outstanding Department of Chemistry PhD Dissertation Student Seminar. UC Davis: Sponsored by the Clorox Foundation.
Campbell, K. A. (1998, November). Studies of Y Z • in PSII and its role in proton-coupled electron transfer. US-Japan Seminar on Proton-Coupled Electron Transfer. Kona, HI: NSF and Japanese Ministry of Science.
Regular Participant Presentations
Campbell, K. A. (2023, August). Learning Topic Series 1. Electron Paramagnetic Resonance and Nuclear Magnetic Resonance Introduction. Dept. of Electrical and Computer Engineering Seminar Boise State University. Boise, ID.
Campbell, K. A. (2021, November). Recent Innovations From the Boise State Electronics and Natural Sciences Research Lab. Dept. of Electrical and Computer Engineering Seminar Boise State University. Boise, ID.
Campbell, K. A. (2018, October). Advances in Memristor Devices. Dept. of Electrical and Computer Engineering Seminar Boise State University. Boise, ID.
Campbell, K. A., Davis, M. G., Southwick III, R., Bui, H., Reed, J., Knowlton, B., & Peloquin, J. M. (2008, March). Chalcogenide-Metal Alloys and Layered Chalcogenide Material Devices for Application in Multi-State Phase-Change Electronic Memory. 2008 Spring MRS meeting. Materials Research Society.
Campbell, K. A. (2007, June). Chalcogenide bilayer materials used to create multi-state resistance variable devices. American Chemical Society Northwest Regional Meeting. Boise, ID: American Chemical Society.
Campbell, K. A. (2007, April). Electrical and Physical Characterization of Ge, Te, Se, and Sn-Containing Alloys for Single Layer and Multiple Layer Phase-Change Electronic Memory Applications. Materials Research Society Spring Meeting. San Francisco, CA: Materials Research Society.
Campbell, K. A. (1999, January). The Hydrogen Bonding Environment of Y Z • Studied with the Pulsed EPR Technique of Mims ENDOR. The 8th Western Regional Conference on Photosynthesis. Pacific Grove, CA: Photosynthesis Research Society.
Campbell, K. A. (1998, January). The S1-State of the Mn Cluster of Photosystem II Investigated with Parallel Polarization CW-EPR. The 7th Western Regional Photosynthesis Conference. Pacific Grove, CA: Photosynthesis Research Society.
Conference Proceedings
Huang, Y. i., Li, H., Campbell, K. A., & Han, Z. (2011). Defending false data injection attack on smart grid network using adaptive CUSUM test. In Information Sciences and Systems (CISS), 2011 45th Annual Conference on.
Pino, R. E., Bohl, J. W., McDonald, N., Wysocki, B., Rozwood, P., Campbell, K. A., … Timilsina, A. (2010). Compact method for modeling and simulation of memristor devices: Ion conductor chalcogenide-based memristor devices. In Proceedings of the 2010 IEEE/ACM International Symposium on Nanoscale Architectures.
Wu, X., Saxena, V., & Campbell, K. A. (2014). Energy-efficient STDP-based learning circuits with memristor synapses. In Machine Intelligence and Bio-inspired Computation: Theory and Applications VIII (Vol. 9119).
Tran, T., Rothenbuhler, A., Barney Smith, E., Saxena, V., & Campbell, K. A. (2012). Reconfigurable Threshold Logic Gates using memristive devices. In 2012 IEEE Subthreshold Microelectronics Conference (SubVT) (pp. 1–3).
Kurinec, S., Devasia, A., Cabrera, D., Raoux, S., MacMahona, D., & Campbell, K. A. (2011). Stacked chalcogenide layers for phase change memory. In Proc. European Phase-Change and Ovonics Symposium (4 Sept. 2011).
Drake, K., & Campbell, K. (2011). Chalcogenide-based memristive device control of a LEGO Mindstorms NXT servo motor. In American Institute of Aeronautics and Astronautics Infotech at Aerospace Conference and Exhibit 2011 (p. 1641). https://doi.org/http://dx.doi.org/10.2514/6.2011-1641
Oblea, A. S., Timilsina, A., Moore, D., & Campbell, K. A. (2010). Silver chalcogenide based memristor devices. In Neural Networks (IJCNN), The 2010 International Joint Conference on.
Saxena, V., Campbell, K. A., & Baker, J. (2010). K-delta-1-sigma Modulators for Wideband Analog-to-digital Conversion. In Midwest Symposium on Circuits and Systems.
Gupta, S., Saxena, V., Campbell, K. A., & Baker, R. J. (2009). W-2W Current Steering DAC for Programming Phase Change Memory. In 2009 IEEE Workshop on Microelectronics and Electron Devices (pp. 1–4).
Edwards, A. H., & Campbell, K. A. (2009). Density functional study of Ag in Ge2Se3. In 2009 10th Annual Non-Volatile Memory Technology Symposium (NVMTS) (pp. 1–7).
Lyons, G., Csizmar, C., Peloquin, J. M., & Campbell, K. A. (2009). From Atoms to Memory: Characterization of Chalcogenide Glasses for use in Zero-Field-Splitting Based Non-Volatile Memory Devices. In WMED.
Betre, H. K., Cobbley, S., & Campbell, K. (2009). Variable Gain Amplifiers Using Chalcogenide-Based Variable Resistors. In IEEE WMED 2009. IEEE Workshop on Microelectronic and Electron Devices.
Regner, J., Balasubramanian, M., Cook, B., Li, Y., Kassayebetre, H., Sharma, A., … Campbell, K. A. (2009). Integration of IC industry feature sizes with university back-end-of-line post processing: example using a phase-change memory test chip. In IEEE WMED 2009. IEEE Workshop on Microelectronic and Electron Devices.
Campbell, K. (2009). Chalcogenide-Based Materials for Application in Electronic Memory. In IEEE WMED.
Rapole, H., Rajagiri, A., Balasubramanian, M., Campbell, K. A., & Baker, R. J. (2009). Resistive Memory Sensing Using Delta-Sigma Modulation. In IEEE WMED 2009. IEEE Workshop on Microelectronic and Electron Devices.
Campbell, K. A. (2009). 2009 Non-Volatile Memory Technology Symposium, Portland, OR. In 10th Non-Volatile Memory Technology Symposium. IEEE Electron Devices Society.
Campbell, K. A. (2008). 9th Non-Volatile Memory Technology Symposium. In Pacific Grove, CA. IEEE Electron Devices Society.
Ande, H. K., Busa, P., Balasubramanian, M., Campbell, K. A., & Baker, R. J. (2008). A new approach to the design, fabrication, and testing of chalcogenide-based multi-state phase-change nonvolatile memory. In Circuits and Systems, 2008. MWSCAS 2008. 51st Midwest Symposium on.
Campbell, K. A. (2007). 2007 Non-Volatile Memory Technology Symposium, San Mateo, CA. In 8th Non-Volatile Memory Technology Symposium. IEEE Electron Devices Society.
https://doi.org/10.1109/NVMT.2007.4389931
Munoz, B., & Campbell, K. (2007). Poster Presentation 4: The Influence of Deposition Method on the Morphology of Thin Films of TCNQ for Potential Application as Ion-Conducting Memory. In IEEE Workshop on Microelectronics and Electron Devices, 2007. WMED 2007.
Davis, M., & Campbell, K. (2007). Poster Presentation 3: Metal-Doped Chalcogenide Glasses as Phase-Change Memory Materials. In Microelectronics and Electron Devices, 2007. WMED 2007. IEEE Workshop on.
Anderson, C. M., & Campbell, K. (2007). Poster Presentation 2: Phase Change Memory Devices with Stacked Ge-Chalcogenide/Sn-Chalcogenide Films. In Microelectronics and Electron Devices, 2007. WMED 2007. IEEE Workshop on.
Herring, P. K., & Campbell, K. A. (2006). Resistance switching in Sn/sub x/Mn/sub y/Te/sub z/-based devices. In IEEE WMED 2006. IEEE Workshop on Microelectronic and Electron Devices. (p. 2 pp.–22).
Bregaj, A., & Campbell, K. A. (2006). Characterization of negative differential resistance in chalcogenide devices containing silver. In IEEE WMED 2006. IEEE Workshop on Microelectronic and Electron Devices.
Campbell, K. A. (2006). 2006 Non-Volatile Memory Technology Symposium, Albuquerque, NM. In 7th Non-Volatile Memory Technology Symposium. IEEE Electron Devices Society.
https://doi.org/10.1109/NVMT.2007.4389931
Peloquin, J. M., Campbell, K. A., & Britt, R. D. (1998). Mn pulsed ENDOR of the photosystem II “split” EPR signal. In Book of Abstracts, 216th ACS National Meeting, Boston, August 23-27 (p. INOR–472a). American Chemical Society.
Campbell, K. A., Gregor, W., Pham, D., Debus, R. J., Peloquin, J. M., & Britt, R. D. (1998). Parallel polarization EPR studies of the S1-state of the photosystem II oxygen-evolving complex. In Book of Abstracts, 216th ACS National Meeting, Boston, August 23-27 (p. INOR–472). American Chemical Society.
Student Poster Presentations
Tanya Lu, & Campbell, K. A. (2021, September). Plasma Enhanced Chemical Vapor Deposition of Boron Nitride Thin Films. Idaho Conference on Undergraduate Research.
Bassine, R. A., & Campbell, K. A. (2020, April). Creating an Inclusive Learning Environment in Electrical Engineering Circuits Undergraduate Laboratories: A LabView Interface for Laboratory Test Equipment for the Visually Impaired. URS 2020. Boise State University.
Lu, T., & Campbell, K. A. (2019, April). Investigation of the Conduction Mechanisms in the Ag- and Cu-Based Self-Directed Channel (SDC) Memristors. 61st Annual Idaho Academy of Science and Engineering Symposium. Meridian, ID: Idaho Academy of Sciences.
Lu, T., & Campbell, K. A. (2019, April). Investigation of the Conduction Mechanisms in the Ag- and Cu-Based Self-Directed Channel (SDC) Memristors. Undergraduate Research and Scholarship Conference. Boise, ID: Boise State University.
Kumaravadivel, P. K., & Campbell, K. A. (2019, April). Influence of the type of Chalcogen (Ch) atom on the electrical properties of a Ge2Se3 /Sn-Ch memristive device. 61st Annual Idaho Academy of Science and Engineering Symposium. Meridian, ID: Idaho Academy of Sciences.
Kumaravadivel, P., & Campbell, K. A. (2019, April). Influence of the type of Chalcogen (Ch) atom on the electrical properties of a Ge2Se3 /Sn-Ch memristive device. Graduate Student Showcase 2019. Boise State University: Boise State University.
Kabir, F. M., & Campbell, K. A. (2019, April). Ge2Se3 /Ge2Se3 -M (M = Sn, Al, Ti, W, Cr, Pb, Cu, C)-Based Optically-Gated Transistor (OGT): M Influence on Optical and Electrical Properties. Graduate Student Showcase. Boise State University: Boise State University.
Majumdar, K. H., & Campbell, K. A. (2019, April). A Study of the Electrical Conduction Mechanisms of Bilayer Phase-Change Memory Devices over the Temperature Range of 5 K to 340 K. Graduate Student Showcase 2019. Boise State University: Boise State University.
Campbell, K. A., & Bassine, R. A. (2019, April). Characterization of the Optically-Gated Transistor in Response to Light Pulse Shape and Wavelength. Undergraduate Research Conference. Boise State University: Boise State University.
Majumdar, K. H., & Campbell, K. A. (2019, April). A Study of the Electrical Conduction Mechanisms of Bilayer Phase-Change Memory Devices over the Temperature Range of 5 K to 340 K. 2019 MRS Spring Meeting & Exhibit. Phoenix, Arizona: Materials Research Society.
Kabir, F. M., & Campbell, K. A. (2019, April). Ge2Se3 /Ge2Se3-M (M = Sn, Al, Ti, W, Cr, Pb, Cu, C)-Based Optically-Gated Transistor (OGT): M Influence on Optical and Electrical Properties. 2019 MRS Spring Meeting. Phoenix, Arizona: Materials Research Society.
Kumaravadivel, P. K., & Campbell, K. A. (2019, April). Influence of the type of Chalcogen (Ch) atom on the electrical properties of a Ge2Se3 /Sn-Ch memristive device. 2019 MRS Spring Meeting. Phoenix, AZ: Materials Research Society.
Kabir, M. F., & Campbell, K. A. (2018, April). Optically-Gated Ge2Se3-Metal Transistor. Boise State Graduate Student Showcase. BSU: BSU Graduate College.
Majumdar, M. K. H., & Campbell, K. A. (2018, April). Using a memristor-based circuit to control leaf movement in the Mimosa pudica plant. BSU Graduate Student Showcase. BSU: BSU Graduate College.
Kumaravadivel, P. K., & Campbell, K. A. (2018, April). Characterization of Conduction Mechanisms in a Memristor Displaying Differential Negative Resistance. BSU Graduate Student Showcase. BSU: BSU Graduate College.
Lloyd, D., & Campbell, K. A. (2018, July). Speech Characterization Using a Single Memristor. Idaho Conference on Undergraduate Research. Boise State University: Idaho State Board of Education, INL, NSF, NIH.
Bassine, R. A., & Campbell, K. A. (2018, July). Optically Gated Transistor Amplifier. Idaho Conference on Undergraduate Research. Boise State University: Idaho State Board of Education, INL, NSF, NIH.
Bassine, R. A., & Campbell, K. A. (2017, July). Current-Voltage Response of Cosputtered Ge40Se60 Films. Idaho Conference on Undergraduate Research. Boise: Idaho State Board of Education, INL, NSF, NIH.
Lloyd, D., & Campbell, K. A. (2017, July). Using LT-Spice Circuit Modeling to Investigate the Effects of Changing the Metal-Selenide Layer in the Self-Directed Channel Memristor. Idaho Conference on Undergraduate Research. Boise, ID: Idaho State Board of Education, INL, NSF, NIH.
Astle, J., & Campbell, K. A. (2017, July). Fabrication of Memristors at Boise State University. Idaho Conference on Undergraduate Research. Boise, ID: Idaho State Board of Education, INL, NSF, NIH.
Stevens, M., Smith, E. H., & Campbell, K. A. (2016, April). Design, fabrication, and electrical characterization of three novel generic memristors. IEEE Workshop on Microelectronic and Electronic Devices (WMED) 2016. Boise, ID: IEEE.
Butler, W., & Campbell, K. A. (2015, April). Study of the Differences in the Electrical Conduction Mechanisms of a Cu-Based and Ag-Based Chalcogenide Ion-Conducting Resistance RAM. WMED. Boise, ID: IEEE.
Pradhan, R., Campbell, K. A., & others. (2013, April). Modeling of Negative Differential Resistance in Memristive Devices. IEEE WMED. Boise, ID: IEEE.
Stauts, S., Drake, K., & Campbell, K. A. (2013, April). Continuously-Variable Programming in Ionic-Conducting Devices Displaying Differential Negative Resistance. IEEE WMED. Boise, ID: IEEE.
Drake, K., & Campbell, K. A. (2012, March). Using Robots to Automate New Memristor Device Testing. WMED 2012. Boise, ID: IEEE.
Drake, K., & Campbell, K. A. (2010, March). Using Robotics to Automate New Memory Device Testing. WMED 2010. Boise, ID: IEEE.
Davis, M. G., & Campbell, K. A. (2007, April). Metal Doped Chalcogenide Glasses as Phase-Change Memory Materials. IEEE Workshop on Microelectronics and Electron Devices (WMED). Boise State University, Boise, ID: IEEE.